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IPD100N06S403ATMA2

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description Trans MOSFET N-CH 60V 100A Automotive 3-Pin(2+Tab) DPAK T/R
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Inventory: 2877
Minimum: 1
Total Price: USD $2.01
Unit Price: USD $2.00508
≥1 USD $2.00508
≥10 USD $1.665972
≥100 USD $1.32594
≥500 USD $1.12194
≥1000 USD $0.951942

Technical Details

Supply Chain

Factory Lead Time 16 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Weight 3.949996g
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2005
Series Automotive, AEC-Q101, OptiMOS?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 150W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 150W
Case Connection DRAIN
Turn On Delay Time 30 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.5m Ω @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 90μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 10400pF @ 25V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 128nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 100A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 60V
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 400A
Max Junction Temperature (Tj) 175°C

Dimensions

Height 2.5mm

Compliance

RoHS Status ROHS3 Compliant

Alternative Model

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