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BUZ30AH3045AATMA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description Trans MOSFET N-CH 200V 21A 3-Pin(2+Tab) TO-263
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Inventory: 3051
Minimum: 1
Total Price: USD $2.82
Unit Price: USD $2.818935
≥1 USD $2.818935
≥10 USD $2.313203
≥100 USD $2.241383
≥500 USD $2.168565
≥1000 USD $2.096745

Technical Details

Supply Chain

Factory Lead Time 26 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON

Compliance

RoHS Status ROHS3 Compliant
Lead Free Contains Lead

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2004
Series SIPMOS?
JESD-609 Code e3
Pbfree Code no
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Power Dissipation-Max 125W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 125W
Case Connection DRAIN
Turn On Delay Time 30 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 130m Ω @ 13.5A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1900pF @ 25V
Current - Continuous Drain (Id) @ 25°C 21A Tc
Rise Time 70 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 90 ns
Turn-Off Delay Time 250 ns
Continuous Drain Current (ID) 21A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 200V
Pulsed Drain Current-Max (IDM) 84A
Avalanche Energy Rating (Eas) 450 mJ

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