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RoHS
RoHS RoHS compliant
Package 4-VSFN Exposed Pad
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-Ch DTMOSIV 600 V 104W 890pF 11.5A
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Inventory: 7921
Minimum: 1
Total Price: USD $3.82
Unit Price: USD $3.823441
≥1 USD $3.823441
≥10 USD $3.60701
≥100 USD $3.402842
≥500 USD $3.210226
≥1000 USD $3.028518

Technical Details

Supply Chain

Factory Lead Time 16 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 4-VSFN Exposed Pad
Number of Pins 5
Supplier Device Package 4-DFN-EP (8x8)

Technical

Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2015
Series DTMOSIV
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 104W Tc
Turn On Delay Time 45 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 300mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id 3.7V @ 600μA
Input Capacitance (Ciss) (Max) @ Vds 890pF @ 300V
Current - Continuous Drain (Id) @ 25°C 11.5A Ta
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Rise Time 23ns
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 5.5 ns
Turn-Off Delay Time 85 ns
Continuous Drain Current (ID) 11.5A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 600V
Input Capacitance 890pF
FET Feature Super Junction
Drain to Source Resistance 300mOhm
Rds On Max 300 mΩ

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant
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