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FQA17P10

ON Semiconductor
RoHS
/
Package TO-3P-3, SC-65-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET P-CH 100V 18A TO-3P
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Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3
Supplier Device Package TO-3P

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2002
Series QFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Voltage - Rated DC -100V
Technology MOSFET (Metal Oxide)
Current Rating -18A
Power Dissipation-Max 120W Tc
Element Configuration Single
Power Dissipation 120W
FET Type P-Channel
Rds On (Max) @ Id, Vgs 190mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 25V
Current - Continuous Drain (Id) @ 25°C 18A Tc
Gate Charge (Qg) (Max) @ Vgs 39nC @ 10V
Rise Time 200ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 100 ns
Turn-Off Delay Time 45 ns
Continuous Drain Current (ID) 18A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage -100V
Input Capacitance 1.1nF
Drain to Source Resistance 190mOhm
Rds On Max 190 mΩ

Compliance

RoHS Status RoHS Compliant
Lead Free Lead Free

Alternative Model

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