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HUFA76432P3

ON Semiconductor
RoHS
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Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 60V 59A TO-220AB
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Technical Details

Physical

Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2002
Series UltraFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 130W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 17mOhm @ 59A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1765pF @ 25V
Current - Continuous Drain (Id) @ 25°C 59A Tc
Gate Charge (Qg) (Max) @ Vgs 53nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V

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