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HUFA75339G3

ON Semiconductor
RoHS
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Package TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 55V 75A TO-247
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Technical Details

Physical

Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247-3

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2002
Series UltraFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 200W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 12mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 75A Tc
Gate Charge (Qg) (Max) @ Vgs 130nC @ 20V
Drain to Source Voltage (Vdss) 55V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V

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