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BSP123E6327T

Infineon Technologies
RoHS
/
Package TO-261-4, TO-261AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 100V 370MA SOT223
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Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Supplier Device Package PG-SOT223-4

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2003
Series SIPMOS?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated DC 100V
Technology MOSFET (Metal Oxide)
Current Rating 380mA
Power Dissipation-Max 1.79W Ta
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6Ohm @ 370mA, 10V
Vgs(th) (Max) @ Id 1.8V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 70pF @ 25V
Current - Continuous Drain (Id) @ 25°C 370mA Ta
Gate Charge (Qg) (Max) @ Vgs 2.4nC @ 10V
Rise Time 5ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 2.8V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 370mA
Input Capacitance 70pF
Rds On Max 6 Ω

Compliance

RoHS Status Non-RoHS Compliant
Lead Free Lead Free

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