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PSMN165-200K,518

Nexperia USA Inc.
RoHS
/
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 200V 2.9A SOT96-1
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Inventory: 9049
Minimum: 1
Total Price: USD $0.85
Unit Price: USD $0.84588
≥1 USD $0.84588
≥10 USD $0.69426
≥100 USD $0.672315
≥500 USD $0.651368
≥1000 USD $0.629423

Technical Details

Supply Chain

Factory Lead Time 16 Weeks

Physical

Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Surface Mount YES
Number of Pins 8
Transistor Element Material SILICON

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 1997
Series TrenchMOS?
JESD-609 Code e4
Part Status Obsolete
Moisture Sensitivity Level (MSL) 2 (1 Year)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish NICKEL PALLADIUM GOLD
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 8
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 3.5W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.5W
Turn On Delay Time 12 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 165m Ω @ 2.5A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1330pF @ 25V
Current - Continuous Drain (Id) @ 25°C 2.9A Tc
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Rise Time 11 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 25 ns
Turn-Off Delay Time 50 ns
Continuous Drain Current (ID) 2.9A
JEDEC-95 Code MS-012AA
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 200V
Drain-source On Resistance-Max 0.165Ohm
Drain to Source Breakdown Voltage 200V

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