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IXTI10N60P

IXYS
RoHS
/
Package TO-262-3 Long Leads, I2Pak, TO-262AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description Trans MOSFET N-CH 600V 10A 3-Pin(2+Tab) TO-263
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Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Transistor Element Material SILICON

Compliance

RoHS Status RoHS Compliant
Lead Free Lead Free

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2006
Series PolarHV?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED
Voltage - Rated DC 600V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 10A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PSIP-T3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 200W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 200W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 740m Ω @ 5A, 10V
Vgs(th) (Max) @ Id 5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 1610pF @ 25V
Current - Continuous Drain (Id) @ 25°C 10A Tc
Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V
Rise Time 24ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 18 ns
Turn-Off Delay Time 55 ns
Continuous Drain Current (ID) 10A
JEDEC-95 Code TO-263
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.74Ohm
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 30A
Avalanche Energy Rating (Eas) 500 mJ

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