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IRF6629TRPBF

Infineon Technologies
RoHS
/
Package DirectFET? Isometric MX
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 25V 29A DIRECTFET
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Inventory: 9592
Minimum: 1
Total Price: USD $1.07
Unit Price: USD $1.072313
≥1 USD $1.072313
≥10 USD $0.879795
≥100 USD $0.852863
≥500 USD $0.824933
≥1000 USD $0.798

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET? Isometric MX
Number of Pins 5
Transistor Element Material SILICON

Technical

Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
Series HEXFET?
JESD-609 Code e1
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Subcategory FET General Purpose Power
Voltage - Rated DC 25V
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Current Rating 29A
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-XBCC-N3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.8W Ta 100W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 100W
Case Connection DRAIN
Turn On Delay Time 20 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.1m Ω @ 29A, 10V
Vgs(th) (Max) @ Id 2.35V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 4260pF @ 13V
Current - Continuous Drain (Id) @ 25°C 29A Ta 180A Tc
Gate Charge (Qg) (Max) @ Vgs 51nC @ 4.5V
Rise Time 67ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 7.4 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 23A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 180A
Drain-source On Resistance-Max 0.0021Ohm
Drain to Source Breakdown Voltage 25V
Pulsed Drain Current-Max (IDM) 230A
Avalanche Energy Rating (Eas) 1170 mJ

Dimensions

Height 506μm
Length 6.35mm
Width 5.05mm

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

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