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BSP149 E6906

Infineon Technologies
RoHS
/
Package TO-261-4, TO-261AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 200V 660MA SOT-223
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Technical Details

Physical

Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
Series SIPMOS?
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 1.8W Ta
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.8 Ω @ 660mA, 10V
Vgs(th) (Max) @ Id 1V @ 400μA
Input Capacitance (Ciss) (Max) @ Vds 430pF @ 25V
Current - Continuous Drain (Id) @ 25°C 660mA Ta
Gate Charge (Qg) (Max) @ Vgs 14nC @ 5V
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 0V 10V
Vgs (Max) ±20V
FET Feature Depletion Mode

Compliance

RoHS Status Non-RoHS Compliant

Alternative Model

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