BTS113AE3045ANTMA1

Infineon Technologies

RoHS

Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Description Trans MOSFET N-CH 60V 11.5A 3-Pin(2+Tab) TO-220AB SMD T/R

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Technical Details

Physical

Mount Surface Mount

Mounting Type Surface Mount

Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Pins 3

Transistor Element Material SILICON

Compliance

Radiation Hardening No

RoHS Status Non-RoHS Compliant

Technical

Operating Temperature -55°C~150°C TJ

Packaging Tape & Reel (TR)

Published 2000

Series TEMPFET?

Part Status Obsolete

Moisture Sensitivity Level (MSL) 1 (Unlimited)

Number of Terminations 2

Additional Feature LOGIC LEVEL COMPATIBLE

Technology MOSFET (Metal Oxide)

Terminal Position SINGLE

Terminal Form GULL WING

JESD-30 Code R-PSSO-G2

Number of Elements 1

Configuration SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR

Power Dissipation-Max 40W Tc

Operating Mode ENHANCEMENT MODE

Power Dissipation 40W

Case Connection DRAIN

FET Type N-Channel

Transistor Application SWITCHING

Rds On (Max) @ Id, Vgs 170m Ω @ 5.8A, 4.5V

Vgs(th) (Max) @ Id 2.5V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds 560pF @ 25V

Current - Continuous Drain (Id) @ 25°C 11.5A Tc

Drain to Source Voltage (Vdss) 60V

Drive Voltage (Max Rds On,Min Rds On) 4.5V

Vgs (Max) ±10V

Continuous Drain Current (ID) 11.5A

Pulsed Drain Current-Max (IDM) 46A

DS Breakdown Voltage-Min 60V

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