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IPB77N06S3-09

Infineon Technologies
RoHS
/
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 55V 77A D2PAK
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Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON

Compliance

RoHS Status RoHS Compliant
Lead Free Lead Free

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2007
Series OptiMOS?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish MATTE TIN
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Voltage - Rated DC 55V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 77A
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 107W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 107W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8.8m Ω @ 39A, 10V
Vgs(th) (Max) @ Id 4V @ 55μA
Input Capacitance (Ciss) (Max) @ Vds 5335pF @ 25V
Current - Continuous Drain (Id) @ 25°C 77A Tc
Gate Charge (Qg) (Max) @ Vgs 103nC @ 10V
Rise Time 51ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 51 ns
Turn-Off Delay Time 29 ns
Continuous Drain Current (ID) 77A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0088Ohm
Drain to Source Breakdown Voltage 55V
Pulsed Drain Current-Max (IDM) 308A
Avalanche Energy Rating (Eas) 170 mJ

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