Operating Temperature -55°C~175°C TJ
Packaging Bulk
Published 2006
Series PolarHT? HiPerFET?
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Additional Feature AVALANCHE ENERGY RATED
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 480W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 480W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 24m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds 3500pF @ 25V
Current - Continuous Drain (Id) @ 25°C 96A Tc
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Rise Time 33ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 18 ns
Turn-Off Delay Time 66 ns
Continuous Drain Current (ID) 96A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.024Ohm
Drain to Source Breakdown Voltage 150V
Pulsed Drain Current-Max (IDM) 250A
Avalanche Energy Rating (Eas) 1000 mJ