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SI1022R-T1-E3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package SC-75A
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET 60V 0.33A
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Inventory: 9918
Minimum: 1
Total Price: USD $0.09
Unit Price: USD $0.088778
≥1 USD $0.088778
≥10 USD $0.072818
≥100 USD $0.070823
≥500 USD $0.068828
≥1000 USD $0.065835
≥10000 USD $0.05985

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-75A
Number of Pins 3
Supplier Device Package SC-75A

Compliance

Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Dimensions

Height 700μm
Length 1.58mm
Width 760μm

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series TrenchFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 3Ohm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 250mW Ta
Element Configuration Single
Power Dissipation 250mW
Turn On Delay Time 25 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.25Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 30pF @ 25V
Current - Continuous Drain (Id) @ 25°C 330mA Ta
Gate Charge (Qg) (Max) @ Vgs 0.6nC @ 4.5V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Turn-Off Delay Time 35 ns
Continuous Drain Current (ID) 330mA
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
Input Capacitance 30pF
Drain to Source Resistance 1.25Ohm
Rds On Max 1.25 Ω
Nominal Vgs 2.5 V
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