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SI1304BDL-T1-E3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package SC-70, SOT-323
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 30V 0.9A SOT323-3
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Inventory: 1075
Minimum: 1
Total Price: USD $1.02
Unit Price: USD $1.024409
≥1 USD $1.024409
≥10 USD $0.966431
≥100 USD $0.911722
≥500 USD $0.860111
≥1000 USD $0.811426

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 270mOhm
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Power Dissipation-Max 340mW Ta 370mW Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 340mW
Turn On Delay Time 10 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 270m Ω @ 900mA, 4.5V
Vgs(th) (Max) @ Id 1.3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 100pF @ 15V
Current - Continuous Drain (Id) @ 25°C 900mA Tc
Gate Charge (Qg) (Max) @ Vgs 2.7nC @ 4.5V
Rise Time 30 ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 30 ns
Turn-Off Delay Time 5 ns
Continuous Drain Current (ID) 900mA
Threshold Voltage 1.3V
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 0.85A
Drain to Source Breakdown Voltage 30V
Nominal Vgs 1.3 V

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Dimensions

Height 990.6μm
Length 2.1844mm
Width 1.3462mm

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