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SI1050X-T1-E3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package SOT-563, SOT-666
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 8V 1.34A SOT563F
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Inventory: 2329
Minimum: 1
Total Price: USD $2.89
Unit Price: USD $2.891753
≥1 USD $2.891753
≥10 USD $2.372055
≥100 USD $2.29824
≥500 USD $2.224425
≥1000 USD $2.149613

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Number of Pins 6
Supplier Device Package SC-89-6
Weight 32.006612mg

Compliance

RoHS Status ROHS3 Compliant

Dimensions

Height 600μm
Length 1.7mm
Width 1.2mm

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
Series TrenchFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 236mW Ta
Element Configuration Single
Turn On Delay Time 6.8 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 86mOhm @ 1.34A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 585pF @ 4V
Current - Continuous Drain (Id) @ 25°C 1.34A Ta
Gate Charge (Qg) (Max) @ Vgs 11.6nC @ 5V
Rise Time 35ns
Drain to Source Voltage (Vdss) 8V
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Vgs (Max) ±5V
Fall Time (Typ) 35 ns
Turn-Off Delay Time 26 ns
Continuous Drain Current (ID) 1.34A
Gate to Source Voltage (Vgs) 5V
Input Capacitance 585pF
Drain to Source Resistance 86mOhm
Rds On Max 86 mΩ

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