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SI1417EDH-T1-E3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package 6-TSSOP, SC-88, SOT-363
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET 12V 3.3A 1.56W 85 mohms @ 4.5V
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Inventory: 2812
Minimum: 1
Total Price: USD $0.16
Unit Price: USD $0.157605
≥1 USD $0.157605
≥10 USD $0.128678
≥100 USD $0.124688
≥500 USD $0.120698
≥1000 USD $0.116708

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 85MOhm
Terminal Finish PURE MATTE TIN
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 6
Number of Elements 1
Power Dissipation-Max 1W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1W
Turn On Delay Time 600 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 85m Ω @ 3.3A, 4.5V
Vgs(th) (Max) @ Id 450mV @ 250μA (Min)
Current - Continuous Drain (Id) @ 25°C 2.7A Ta
Gate Charge (Qg) (Max) @ Vgs 8nC @ 4.5V
Rise Time 1.4 μs
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 1.4 μs
Turn-Off Delay Time 4.9 μs
Continuous Drain Current (ID) -3.3A
Threshold Voltage -450mV
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 2.7A
Drain to Source Breakdown Voltage 12V
Nominal Vgs -450 mV

Compliance

Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant

Dimensions

Height 900μm
Length 2.05mm
Width 1.25mm

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