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SI2302ADS-T1-E3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package TO-236-3, SC-59, SOT-23-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 20V 2.1A SOT23-3
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Inventory: 1043
Minimum: 1
Total Price: USD $0.01
Unit Price: USD $0.010032
≥1 USD $0.010032
≥10 USD $0.009737
≥100 USD $0.009442
≥500 USD $0.009073

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Supplier Device Package SOT-23-3 (TO-236)
Weight 1.437803g

Dimensions

Height 1.02mm
Length 3.04mm
Width 1.4mm

Compliance

REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 700mW Ta
Element Configuration Single
Power Dissipation 700mW
Output Power 700mW
Turn On Delay Time 7 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 60mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 300pF @ 10V
Current - Continuous Drain (Id) @ 25°C 2.1A Ta
Gate Charge (Qg) (Max) @ Vgs 10nC @ 4.5V
Rise Time 55ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 55 ns
Turn-Off Delay Time 16 ns
Continuous Drain Current (ID) 2.1A
Threshold Voltage 950mV
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage 20V
Dual Supply Voltage 20V
Input Capacitance 300pF
Drain to Source Resistance 60mOhm
Rds On Max 60 mΩ
Nominal Vgs 950 mV

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