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SI4833ADY-T1-E3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET P-CH 30V 4.6A 8-SOIC
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Inventory: 100
Minimum: 1
Total Price: USD $0.87
Unit Price: USD $0.871815
≥1 USD $0.871815
≥10 USD $0.715208
≥100 USD $0.693263
≥500 USD $0.67032
≥1000 USD $0.648375

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Supplier Device Package 8-SO
Weight 186.993455mg

Dimensions

Height 1.55mm
Length 5mm
Width 4mm

Compliance

RoHS Status ROHS3 Compliant

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series LITTLE FOOT?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.93W Ta 2.75W Tc
Turn On Delay Time 7 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 72mOhm @ 3.6A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 750pF @ 15V
Current - Continuous Drain (Id) @ 25°C 4.6A Tc
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Rise Time 11ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 11 ns
Turn-Off Delay Time 19 ns
Continuous Drain Current (ID) 3.85A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -30V
Input Capacitance 750pF
FET Feature Schottky Diode (Isolated)
Drain to Source Resistance 72mOhm
Rds On Max 72 mΩ

Alternative Model

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