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STE26NA90

STMicroelectronics
RoHS
/
Package ISOTOP
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 900V 26A ISOTOP
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Technical Details

Physical

Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case ISOTOP
Number of Pins 4
Transistor Element Material SILICON

Compliance

Radiation Hardening No
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead

Technical

Operating Temperature 150°C TJ
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Additional Feature UL RECOGNIZED
Subcategory FET General Purpose Power
Voltage - Rated DC 900V
Technology MOSFET (Metal Oxide)
Terminal Position UPPER
Terminal Form UNSPECIFIED
Current Rating 26A
Base Part Number STE26
Pin Count 4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 450W Tc
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
Turn On Delay Time 40 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 300m Ω @ 13A, 10V
Vgs(th) (Max) @ Id 3.75V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1770pF @ 25V
Current - Continuous Drain (Id) @ 25°C 26A Tc
Gate Charge (Qg) (Max) @ Vgs 660nC @ 10V
Rise Time 52ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 25 ns
Continuous Drain Current (ID) 26A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.3Ohm
Avalanche Energy Rating (Eas) 3000 mJ

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