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NTP75N03L09

ON Semiconductor
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 30V 75A TO220AB
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Inventory: 45614
Minimum: 1
Total Price: USD $0.53
Unit Price: USD $0.53067
≥1 USD $0.53067
≥10 USD $0.43491
≥100 USD $0.421943
≥500 USD $0.407978
≥1000 USD $0.394013

Technical Details

Supply Chain

Lifecycle Status OBSOLETE (Last Updated: 2 days ago)

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON

Compliance

RoHS Status Non-RoHS Compliant
Lead Free Contains Lead

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2005
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn80Pb20)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Current Rating 75A
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 2.5W Ta 125W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 125W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8m Ω @ 37.5A, 5V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5635pF @ 25V
Current - Continuous Drain (Id) @ 25°C 75A Tc
Gate Charge (Qg) (Max) @ Vgs 75nC @ 5V
Rise Time 130ns
Drive Voltage (Max Rds On,Min Rds On) 5V
Vgs (Max) ±20V
Fall Time (Typ) 105 ns
Turn-Off Delay Time 65 ns
Continuous Drain Current (ID) 75A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.008Ohm
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 225A
Avalanche Energy Rating (Eas) 1500 mJ

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