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Package DirectFET? Isometric MT
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description N-Channel 20V 32A (Ta), 180A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET? MT
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Technical Details

Technical

Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 2.8W Ta 89W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 6580pF @ 10V
Current - Continuous Drain (Id) @ 25°C 32A Ta 180A Tc
Gate Charge (Qg) (Max) @ Vgs 71nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±12V
Continuous Drain Current (ID) 180A
Input Capacitance 6.58nF
Rds On Max 1.8 mΩ

Compliance

RoHS Status Non-RoHS Compliant
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