Operating Temperature -65°C~150°C TJ
Packaging Tube
Series SuperMESH?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 900V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Current Rating 26A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STY30N
Pin Count 3
JESD-30 Code R-PSIP-T3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 450W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 450W
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 260m Ω @ 14A, 10V
Vgs(th) (Max) @ Id 4.5V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 12000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 26A Tc
Gate Charge (Qg) (Max) @ Vgs 490nC @ 10V
Rise Time 59ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 72 ns
Turn-Off Delay Time 250 ns
Continuous Drain Current (ID) 26A
Threshold Voltage 3.75V
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.26Ohm
Drain to Source Breakdown Voltage 900V
Avalanche Energy Rating (Eas) 500 mJ