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IRLR9343PBF

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET P-CH 55V 20A DPAK
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Inventory: 55077
Minimum: 1
Total Price: USD $0.85
Unit Price: USD $0.84588
≥1 USD $0.84588
≥10 USD $0.69426
≥100 USD $0.672315
≥500 USD $0.651368
≥1000 USD $0.629423

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON

Dimensions

Height 2.39mm
Length 6.73mm
Width 6.22mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Operating Temperature -40°C~175°C TJ
Packaging Tube
Published 2004
Series HEXFET?
JESD-609 Code e3
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 105MOhm
Terminal Finish MATTE TIN OVER NICKEL
Voltage - Rated DC -55V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -20A
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 79W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 79W
Case Connection DRAIN
Turn On Delay Time 9.5 ns
FET Type P-Channel
Transistor Application AMPLIFIER
Rds On (Max) @ Id, Vgs 105m Ω @ 3.4A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 660pF @ 50V
Current - Continuous Drain (Id) @ 25°C 20A Tc
Gate Charge (Qg) (Max) @ Vgs 47nC @ 10V
Rise Time 24 ns
Drain to Source Voltage (Vdss) 55V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 9.5 ns
Turn-Off Delay Time 21 ns
Continuous Drain Current (ID) 20A
Threshold Voltage -1V
JEDEC-95 Code TO-252AA
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -55V
Pulsed Drain Current-Max (IDM) 60A

Alternative Model

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