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IRLR3915PBF

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 55V 30A DPAK
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Inventory: 51257
Minimum: 1
Total Price: USD $0.71
Unit Price: USD $0.705233
≥1 USD $0.705233
≥10 USD $0.57855
≥100 USD $0.560595
≥500 USD $0.54264
≥1000 USD $0.524685

Technical Details

Physical

Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Transistor Element Material SILICON

Compliance

RoHS Status ROHS3 Compliant

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2002
Series HEXFET?
JESD-609 Code e3
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
HTS Code 8541.29.00.95
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 120W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 14m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1870pF @ 25V
Current - Continuous Drain (Id) @ 25°C 30A Tc
Gate Charge (Qg) (Max) @ Vgs 92nC @ 10V
Drain to Source Voltage (Vdss) 55V
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±16V
JEDEC-95 Code TO-252AA
Drain Current-Max (Abs) (ID) 30A
Drain-source On Resistance-Max 0.014Ohm
Pulsed Drain Current-Max (IDM) 240A
DS Breakdown Voltage-Min 55V
Avalanche Energy Rating (Eas) 200 mJ

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