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Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 60V 10A D2PAK
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Inventory: 15089
Minimum: 1
Total Price: USD $7.95
Unit Price: USD $7.953068
≥1 USD $7.953068
≥10 USD $6.525645
≥100 USD $6.322155
≥500 USD $6.117668
≥1000 USD $5.914178

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Supplier Device Package D2PAK
Weight 1.437803g

Dimensions

Height 4.83mm
Length 10.41mm
Width 9.65mm

Compliance

RoHS Status Non-RoHS Compliant
Lead Free Contains Lead

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 1997
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Current Rating 10A
Number of Channels 1
Power Dissipation-Max 3.7W Ta 43W Tc
Element Configuration Single
Turn On Delay Time 9.3 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 200mOhm @ 6A, 5V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 400pF @ 25V
Current - Continuous Drain (Id) @ 25°C 10A Tc
Gate Charge (Qg) (Max) @ Vgs 8.4nC @ 5V
Rise Time 110ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4V 5V
Vgs (Max) ±10V
Fall Time (Typ) 26 ns
Turn-Off Delay Time 17 ns
Continuous Drain Current (ID) 10A
Gate to Source Voltage (Vgs) 10V
Drain to Source Breakdown Voltage 60V
Input Capacitance 400pF
Drain to Source Resistance 200mOhm
Rds On Max 200 mΩ
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