Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2002
Series HEXFET?
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Resistance 4.7mOhm
Voltage - Rated DC 55V
Technology MOSFET (Metal Oxide)
Current Rating 135A
Number of Elements 1
Power Dissipation-Max 200W Tc
Element Configuration Single
Power Dissipation 200W
Turn On Delay Time 14 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.7m Ω @ 104A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5110pF @ 25V
Current - Continuous Drain (Id) @ 25°C 135A Tc
Gate Charge (Qg) (Max) @ Vgs 230nC @ 10V
Rise Time 120ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 110 ns
Turn-Off Delay Time 68 ns
Continuous Drain Current (ID) 135A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 55V
Dual Supply Voltage 55V
Nominal Vgs 4 V