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ZVNL120CSTOA

Diodes Incorporated
RoHS
/
Package E-Line-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 200V 0.18A TO92-3
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Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case E-Line-3
Transistor Element Material SILICON

Compliance

RoHS Status RoHS Compliant
Lead Free Lead Free

Technical

Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish MATTE TIN
HTS Code 8541.29.00.95
Voltage - Rated DC 200V
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form WIRE
Peak Reflow Temperature (Cel) 260
Reach Compliance Code unknown
Current Rating 180mA
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
JESD-30 Code R-PSIP-W3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Power Dissipation-Max 700mW Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 700mW
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 10 Ω @ 250mA, 5V
Vgs(th) (Max) @ Id 1.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 85pF @ 25V
Current - Continuous Drain (Id) @ 25°C 180mA Ta
Drive Voltage (Max Rds On,Min Rds On) 3V 5V
Vgs (Max) ±20V
Continuous Drain Current (ID) 180mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.18A
Drain to Source Breakdown Voltage 200V

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