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ZVP0120AS

Diodes Incorporated
RoHS
/
Package TO-226-3, TO-92-3 (TO-226AA)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET P-CH 200V 0.11A TO92-3
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Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Transistor Element Material SILICON

Technical

Packaging Bulk
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
HTS Code 8541.29.00.95
Voltage - Rated DC -200V
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form WIRE
Reach Compliance Code unknown
Current Rating -110mA
Pin Count 3
JESD-30 Code R-PSIP-W3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Power Dissipation-Max 700mW Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 700mW
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 32 Ω @ 125mA, 10V
Vgs(th) (Max) @ Id 3.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 100pF @ 25V
Current - Continuous Drain (Id) @ 25°C 110mA Ta
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 110mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.11A
Drain-source On Resistance-Max 16Ohm
Drain to Source Breakdown Voltage -200V

Compliance

RoHS Status RoHS Compliant
Lead Free Lead Free

Alternative Model

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