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ZXM61P03FTC

Diodes Incorporated
RoHS
RoHS RoHS compliant
Package TO-236-3, SC-59, SOT-23-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET P-CH 30V 1.1A SOT23-3
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Inventory: 10120
Minimum: 1
Total Price: USD $0.46
Unit Price: USD $0.457853
≥1 USD $0.457853
≥10 USD $0.376058
≥100 USD $0.364088
≥500 USD $0.352118
≥1000 USD $0.340148

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Weight 7.994566mg
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature LOW THRESHOLD
Voltage - Rated DC -30V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -1.1A
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
JESD-30 Code R-PDSO-G3
Qualification Status Not Qualified
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 625mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 625mW
Turn On Delay Time 1.9 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 350m Ω @ 600mA, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 140pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1.1A Ta
Gate Charge (Qg) (Max) @ Vgs 4.8nC @ 10V
Rise Time 2.9ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 2.9 ns
Turn-Off Delay Time 8.9 ns
Continuous Drain Current (ID) 1.1A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.35Ohm
Drain to Source Breakdown Voltage -30V

Compliance

RoHS Status ROHS3 Compliant
Lead Free Lead Free

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