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HUF75309P3

ON Semiconductor
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 55V 19A TO-220AB
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Inventory: 9651
Minimum: 1
Total Price: USD $0.41
Unit Price: USD $0.40656
≥1 USD $0.40656

Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2002
Series UltraFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Voltage - Rated DC 55V
Technology MOSFET (Metal Oxide)
Current Rating 19A
Number of Elements 1
Power Dissipation-Max 55W Tc
Element Configuration Single
Power Dissipation 55W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 70mOhm @ 19A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 350pF @ 25V
Current - Continuous Drain (Id) @ 25°C 19A Tc
Gate Charge (Qg) (Max) @ Vgs 24nC @ 20V
Rise Time 39ns
Drain to Source Voltage (Vdss) 55V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 30 ns
Turn-Off Delay Time 24 ns
Continuous Drain Current (ID) 19A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 55V
Input Capacitance 350pF
Drain to Source Resistance 70mOhm
Rds On Max 70 mΩ

Compliance

RoHS Status RoHS Compliant
Lead Free Lead Free

Alternative Model

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