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SI6433BDQ-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package 8-TSSOP (0.173, 4.40mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET 12V 4.8A 1.5W 40mohm @ 4.5V
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Inventory: 49056
Minimum: 1
Total Price: USD $1.45
Unit Price: USD $1.45236
≥1 USD $1.45236
≥10 USD $1.192013
≥100 USD $1.154108
≥500 USD $1.1172
≥1000 USD $1.080293

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-TSSOP (0.173, 4.40mm Width)
Number of Pins 8
Transistor Element Material SILICON

Compliance

Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 40MOhm
Terminal Finish MATTE TIN
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
Number of Elements 1
Power Dissipation-Max 1.05W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.05W
Turn On Delay Time 45 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 40m Ω @ 4.8A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 4A Ta
Gate Charge (Qg) (Max) @ Vgs 15nC @ 4.5V
Rise Time 60 ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 60 ns
Turn-Off Delay Time 70 ns
Continuous Drain Current (ID) -4.8A
Threshold Voltage -1.5V
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 4A
Drain to Source Breakdown Voltage 12V
Nominal Vgs -1.5 V

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