Operating Temperature -55?°C~175?°C TJ
Packaging Tube
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 166W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 166W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 10m ?? @ 40A, 10V
Vgs(th) (Max) @ Id 4V @ 250??A
Input Capacitance (Ciss) (Max) @ Vds 4500pF @ 25V
Current - Continuous Drain (Id) @ 25?°C 80A Tc
Gate Charge (Qg) (Max) @ Vgs 130nC @ 10V
Rise Time 122ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ?±20V
Fall Time (Typ) 113 ns
Turn-Off Delay Time 116 ns
Continuous Drain Current (ID) 80A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
Avalanche Energy Rating (Eas) 280 mJ
Nominal Vgs 3.2 V