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2SK3128(Q)

Toshiba Semiconductor and Storage
RoHS
/
Package TO-3P-3, SC-65-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 30V 60A TO-3PN
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Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3
Supplier Device Package TO-3P(N)

Technical

Operating Temperature 150°C TJ
Packaging Tube
Published 2006
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 150W Tc
Element Configuration Single
Power Dissipation 150W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 12mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2300pF @ 10V
Current - Continuous Drain (Id) @ 25°C 60A Ta
Gate Charge (Qg) (Max) @ Vgs 66nC @ 10V
Rise Time 12ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 75 ns
Continuous Drain Current (ID) 60A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Input Capacitance 2.3nF
Drain to Source Resistance 12mOhm
Rds On Max 12 mΩ

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

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