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Transistors - FETs, MOSFETs - Single
FCP20N60_F080

FCP20N60_F080

ON Semiconductor

RoHS

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Package TO-220-3

Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Description MOSFET N-CH 600V 20A TO-220

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Technical Details

Physical

Mounting Type Through Hole

Package / Case TO-220-3

Supplier Device Package TO-220-3

Technical

Operating Temperature -55°C~150°C TJ

Packaging Tube

Published 2011

Series SuperFET?

Part Status Obsolete

Moisture Sensitivity Level (MSL) 1 (Unlimited)

Technology MOSFET (Metal Oxide)

Power Dissipation-Max 208W Tc

FET Type N-Channel

Rds On (Max) @ Id, Vgs 190mOhm @ 10A, 10V

Vgs(th) (Max) @ Id 5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds 3080pF @ 25V

Current - Continuous Drain (Id) @ 25°C 20A Tc

Gate Charge (Qg) (Max) @ Vgs 98nC @ 10V

Drain to Source Voltage (Vdss) 600V

Drive Voltage (Max Rds On,Min Rds On) 10V

Vgs (Max) ±30V

Alternative Model

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STMicroelectronics

Microsemi Corporation

Diodes Incorporated

Vishay Semiconductor Diodes Division

Vishay Semiconductor Diodes Division

Diodes Incorporated

Microsemi Corporation

1N4733A BK PBFREE

Central Semiconductor Corp

Micro Commercial Co

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