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FQP6N60C_F080

ON Semiconductor
RoHS
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Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 600V 5.5A TO-220
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Technical Details

Physical

Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
Series QFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 125W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2Ohm @ 2.75A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 810pF @ 25V
Current - Continuous Drain (Id) @ 25°C 5.5A Tc
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V

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