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2SK2866(F)

Toshiba Semiconductor and Storage
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 600V 10A TO-220AB
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Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3

Technical

Operating Temperature 150°C TJ
Packaging Bulk
Published 2009
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 125W Tc
Element Configuration Single
Power Dissipation 125W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 750m Ω @ 5A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2040pF @ 10V
Current - Continuous Drain (Id) @ 25°C 10A Ta
Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V
Rise Time 22ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 36 ns
Continuous Drain Current (ID) 10A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 600V

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

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