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2SK2544(F)

Toshiba Semiconductor and Storage
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 600V 6A TO-220AB
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Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220AB

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

Technical

Operating Temperature 150°C TJ
Packaging Bulk
Published 2009
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 80W Tc
Element Configuration Single
Power Dissipation 80W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.25Ohm @ 3A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 10V
Current - Continuous Drain (Id) @ 25°C 6A Ta
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Rise Time 25ns
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 40 ns
Continuous Drain Current (ID) 6A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 600V
Input Capacitance 1.3nF
Drain to Source Resistance 1.25Ohm
Rds On Max 1.25 Ω

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