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TPC8035-H(TE12L,QM

Toshiba Semiconductor and Storage
RoHS
/
Package 8-SOIC (0.173, 4.40mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 30V 18A SOP8 2-6J1B
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Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.173, 4.40mm Width)
Number of Pins 8
Supplier Device Package 8-SOP (5.5x6.0)

Technical

Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series U-MOSVI-H
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 1W Ta
Power Dissipation 1.9W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.2mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 2.3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 7800pF @ 10V
Current - Continuous Drain (Id) @ 25°C 18A Ta
Gate Charge (Qg) (Max) @ Vgs 82nC @ 10V
Rise Time 5.1ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 11 ns
Continuous Drain Current (ID) 18A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Input Capacitance 7.8nF
Drain to Source Resistance 3.2mOhm
Rds On Max 3.2 mΩ

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant

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