IPI028N08N3GHKSA1

Infineon Technologies

RoHS

Package TO-262-3 Long Leads, I2Pak, TO-262AA

Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Description Trans MOSFET N-CH 80V 100A 3-Pin(3+Tab) TO-262

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Technical Details

Physical

Mount Through Hole

Mounting Type Through Hole

Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA

Number of Pins 3

Transistor Element Material SILICON

Technical

Operating Temperature -55°C~175°C TJ

Packaging Tube

Published 2008

Series OptiMOS?

Part Status Obsolete

Moisture Sensitivity Level (MSL) 1 (Unlimited)

Number of Terminations 3

ECCN Code EAR99

Technology MOSFET (Metal Oxide)

Terminal Position SINGLE

Number of Elements 1

Configuration SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max 300W Tc

Operating Mode ENHANCEMENT MODE

FET Type N-Channel

Transistor Application SWITCHING

Rds On (Max) @ Id, Vgs 2.8m Ω @ 100A, 10V

Vgs(th) (Max) @ Id 3.5V @ 270μA

Input Capacitance (Ciss) (Max) @ Vds 14200pF @ 40V

Current - Continuous Drain (Id) @ 25°C 100A Tc

Gate Charge (Qg) (Max) @ Vgs 206nC @ 10V

Drain to Source Voltage (Vdss) 80V

Drive Voltage (Max Rds On,Min Rds On) 6V 10V

Vgs (Max) ±20V

Continuous Drain Current (ID) 100A

Drain-source On Resistance-Max 0.0028Ohm

Pulsed Drain Current-Max (IDM) 400A

DS Breakdown Voltage-Min 80V

Compliance

RoHS Status RoHS Compliant

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