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IPI024N06N3GHKSA1

Infineon Technologies
RoHS
/
Package TO-262-3 Long Leads, I2Pak, TO-262AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 60V 120A TO262-3
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Technical Details

Physical

Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Supplier Device Package PG-TO262-3

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2008
Series OptiMOS?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 250W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 196μA
Input Capacitance (Ciss) (Max) @ Vds 23000pF @ 30V
Current - Continuous Drain (Id) @ 25°C 120A Tc
Gate Charge (Qg) (Max) @ Vgs 275nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V

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