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IPI037N08N3GHKSA1

Infineon Technologies
RoHS
/
Package TO-262-3 Long Leads, I2Pak, TO-262AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 80V 100A TO262-3
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Technical Details

Physical

Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Supplier Device Package PG-TO262-3

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2008
Series OptiMOS?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 214W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.75mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.5V @ 155μA
Input Capacitance (Ciss) (Max) @ Vds 8110pF @ 40V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 117nC @ 10V
Drain to Source Voltage (Vdss) 80V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V

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