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IPI80CN10N G

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-262-3 Long Leads, I2Pak, TO-262AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 100V 13A TO262-3
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Inventory: 1351
Minimum: 1
Total Price: USD $5.2
Unit Price: USD $5.200999
≥1 USD $5.200999
≥10 USD $4.90661
≥100 USD $4.62887
≥500 USD $4.366864
≥1000 USD $4.119673

Technical Details

Physical

Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Surface Mount NO
Transistor Element Material SILICON

Compliance

RoHS Status RoHS Compliant

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2007
Series OptiMOS?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish MATTE TIN
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) 260
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
JESD-30 Code R-PSIP-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 31W Tc
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 80m Ω @ 13A, 10V
Vgs(th) (Max) @ Id 4V @ 12μA
Input Capacitance (Ciss) (Max) @ Vds 716pF @ 50V
Current - Continuous Drain (Id) @ 25°C 13A Tc
Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 13A
Drain-source On Resistance-Max 0.08Ohm
Pulsed Drain Current-Max (IDM) 52A
DS Breakdown Voltage-Min 100V
Avalanche Energy Rating (Eas) 17 mJ

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