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IPD12CN10NGATMA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description Trans MOSFET N-CH 100V 67A 3-Pin TO-252 T/R
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Inventory: 7977
Minimum: 1
Total Price: USD $21.84
Unit Price: USD $21.839265
≥1 USD $21.839265
≥10 USD $17.91909
≥100 USD $17.359493
≥500 USD $16.799895
≥1000 USD $16.2393

Technical Details

Supply Chain

Factory Lead Time 18 Weeks

Compliance

REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series OptiMOS?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 2
Additional Feature FAST SWITCHING
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 125W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 125W
Case Connection DRAIN
Turn On Delay Time 17 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 12.4m Ω @ 67A, 10V
Vgs(th) (Max) @ Id 4V @ 83μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 4320pF @ 50V
Current - Continuous Drain (Id) @ 25°C 67A Tc
Gate Charge (Qg) (Max) @ Vgs 65nC @ 10V
Rise Time 21 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 8 ns
Turn-Off Delay Time 32 ns
Continuous Drain Current (ID) 67A
Threshold Voltage 3V
JEDEC-95 Code TO-252AA
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 100V
Drain-source On Resistance-Max 0.0124Ohm
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 268A
Avalanche Energy Rating (Eas) 154 mJ

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