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IRF6716MTRPBF

Infineon Technologies
RoHS
RoHS RoHS compliant
Package DirectFET? Isometric MX
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 25V 39A DIRECTFET
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Inventory: 86569
Minimum: 1
Total Price: USD $1.08
Unit Price: USD $1.078303
≥1 USD $1.078303
≥10 USD $1.046588
≥100 USD $1.014873
≥500 USD $0.97523

Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET? Isometric MX
Number of Pins 5
Transistor Element Material SILICON

Dimensions

Height 506μm
Length 6.35mm
Width 5.05mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant

Technical

Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series HEXFET?
JESD-609 Code e1
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
JESD-30 Code R-XBCC-N3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 3.6W Ta 78W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 78W
Case Connection DRAIN
Turn On Delay Time 26 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.6m Ω @ 40A, 10V
Vgs(th) (Max) @ Id 2.4V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 5150pF @ 13V
Current - Continuous Drain (Id) @ 25°C 39A Ta 180A Tc
Gate Charge (Qg) (Max) @ Vgs 59nC @ 4.5V
Rise Time 105 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 41 ns
Turn-Off Delay Time 25 ns
Continuous Drain Current (ID) 39A
Threshold Voltage 1.9V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 180A
Drain-source On Resistance-Max 0.0016Ohm
Drain to Source Breakdown Voltage 25V
Pulsed Drain Current-Max (IDM) 320A
Avalanche Energy Rating (Eas) 330 mJ

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