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FCD5N60TM

ON Semiconductor
RoHS
RoHS RoHS compliant
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description Trans MOSFET N-CH 600V 4.6A 3-Pin(2+Tab) DPAK T/R
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Inventory: 2491
Minimum: 1
Total Price: USD $1.56
Unit Price: USD $1.56156
≥1 USD $1.56156
≥10 USD $1.2936
≥100 USD $1.029613
≥500 USD $0.87124
≥1000 USD $0.739237

Technical Details

Supply Chain

Factory Lead Time 14 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
Series SuperFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 950MOhm
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 600V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Current Rating 4.6A
Base Part Number FCD5N60
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 54W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 54W
Case Connection DRAIN
Turn On Delay Time 12 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 950m Ω @ 2.3A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 600pF @ 25V
Current - Continuous Drain (Id) @ 25°C 4.6A Tc
Gate Charge (Qg) (Max) @ Vgs 16nC @ 10V
Rise Time 40 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 22 ns
Turn-Off Delay Time 47 ns
Continuous Drain Current (ID) 4.6A
Threshold Voltage 5V
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 600V

Dimensions

Height 2.39mm
Length 6.73mm
Width 6.22mm

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Weight 260.37mg
Transistor Element Material SILICON

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

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