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CSD16408Q5

Texas Instruments
RoHS
RoHS RoHS compliant
Package 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description N CHANNEL MOSFET, 25V, 113A, SON-8
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Inventory: 2754
Minimum: 1
Total Price: USD $1.13
Unit Price: USD $1.128173
≥1 USD $1.128173
≥10 USD $0.92568
≥100 USD $0.896753
≥500 USD $0.867825
≥1000 USD $0.838898

Technical Details

Supply Chain

Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 5 days ago)

Physical

Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series NexFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Base Part Number CSD16408
Pin Count 8
Number of Elements 1
Power Dissipation-Max 3.1W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.1W
Case Connection DRAIN
Turn On Delay Time 11.3 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.5m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 2.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 12.5V
Current - Continuous Drain (Id) @ 25°C 22A Ta 113A Tc
Gate Charge (Qg) (Max) @ Vgs 8.9nC @ 4.5V
Rise Time 25 ns
Drain to Source Voltage (Vdss) 25V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) +16V, -12V
Fall Time (Typ) 10.8 ns
Turn-Off Delay Time 11 ns
Continuous Drain Current (ID) 113A
Gate to Source Voltage (Vgs) 16V
Drain Current-Max (Abs) (ID) 22A
DS Breakdown Voltage-Min 25V

Dimensions

Height 1.05mm
Length 5mm
Width 6mm
Thickness 1mm

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Contains Lead

Alternative Model

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