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NTMFS4834NT1G

ON Semiconductor
RoHS
RoHS RoHS compliant
Package 8-PowerTDFN, 5 Leads
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET NFET 30V 130A 3MOHM
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Inventory: 10148
Minimum: 1
Total Price: USD $22.55
Unit Price: USD $22.552478
≥1 USD $22.552478
≥10 USD $18.504623
≥100 USD $17.926073
≥500 USD $17.34852
≥1000 USD $16.76997

Technical Details

Supply Chain

Factory Lead Time 16 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)

Physical

Contact Plating Tin
Mounting Type Surface Mount
Package / Case 8-PowerTDFN, 5 Leads
Surface Mount YES
Number of Pins 5
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 5
JESD-30 Code R-PDSO-F6
Number of Elements 1
Power Dissipation-Max 900mW Ta 86.2W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.31W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4500pF @ 12V
Current - Continuous Drain (Id) @ 25°C 13A Ta 130A Tc
Gate Charge (Qg) (Max) @ Vgs 48nC @ 4.5V
Rise Time 34 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 11.5V
Vgs (Max) ±20V
Fall Time (Typ) 23 ns
Turn-Off Delay Time 22 ns
Continuous Drain Current (ID) 21A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.003Ohm
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 260A
Nominal Vgs 1.5 V

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

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