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R6003KND3TL1

ROHM Semiconductor
RoHS
RoHS RoHS compliant
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET LOW ON-RESISTANCE AND FAS
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Inventory: 168
Minimum: 1
Total Price: USD $1.49
Unit Price: USD $1.48764
≥1 USD $1.48764
≥10 USD $1.237236
≥100 USD $0.984522
≥500 USD $0.83306
≥1000 USD $0.706833

Technical Details

Supply Chain

Factory Lead Time 18 Weeks

Compliance

RoHS Status ROHS3 Compliant

Technical

Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 44W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.5 Ω @ 1A, 10V
Vgs(th) (Max) @ Id 5.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 185pF @ 25V
Current - Continuous Drain (Id) @ 25°C 3A Tc
Gate Charge (Qg) (Max) @ Vgs 8nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 3A
Pulsed Drain Current-Max (IDM) 9A
DS Breakdown Voltage-Min 600V
Avalanche Energy Rating (Eas) 13.4 mJ

Alternative Model

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